A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

doi:10.1109/LED.2007.903885

A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

In this letter, a polycrystalline silicon thin─film transistor consisting of silicon─oxide─nitride─oxide─silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage $(V_{\rm th})$, and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

Publication:

IEEE Electron Device Letters

Pub Date:

2007

DOI:

10.1109/LED.2007.903885

Bibcode:

2007IEDL...28..809C

Keywords:

Nanowire (NW);
nonvolatile memory;
polysilicon (poly-Si);
silicon-oxide-nitride-oxide-silicon (SONOS);
thin-film transistor (TFT)

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A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

Abstract